By Robert Lanzone (auth.), Ho-Ming Tong, Yi-Shao Lai, C.P. Wong (eds.)
Advanced turn Chip Packaging provides previous, current and destiny advances and developments in parts akin to substrate expertise, fabric improvement, and meeting procedures. turn chip packaging is now in common use in computing, communications, customer and car electronics, and the call for for turn chip know-how is constant to develop as a way to meet the necessity for items that supply greater functionality, are smaller, and are environmentally sustainable.
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Extra info for Advanced Flip Chip Packaging
Srivastava Fig. 11 Anisotropic elastic modulus and thermal coefficient of expansion on b-Sn at room temperature  Fig. 2 103T–1(K–1) solder joint (see Fig. 11). Importantly, the noble and near noble metals are extremely fast diffusers in Sn and the diffusivity is highly anisotropic. For instance, the diffusivity of Ni along the tetragonal (c-) axis is ~7 Â 10E4 times faster than that at right angles (a- or b-axis) at 120 C (see Fig. 12). Experimentally it has been found that EM damage is strongly dependent on the Sn-grain orientation in Pb-free solders .
A polycarbonate resin containing a new silicone flame-retarding additive has been developed for use in housings. Furthermore, a self-extinguishing epoxy resin compound containing no flame-retarding additives was developed as a high-quality molding resin for electronic parts. These plastics show good general properties as well as high flame retardation . 5 Choice of Sn Sn–Ag–Cu with a liquidus temperature of about 220 C for the eutectic composition has been the solder composition of choice for most of Pb-free device applications.
Srivastava 2 Technology Trends: Past, Present, and Future 27 depositing solder on to the laminate surface. When very large solder connections are needed, ball drop is the preferred method. As with Ball drop and solder paste, C4NP (developed by IBM in collaboration with Suss Microsystems) can deliver unique solder compositions with more than two metals . , increased power and thermal dissipation requirements, architectural shift to multi-cores giving increased I/O count and current density, and increased interconnection density.